GAAFET (gate-all-around)
Türkçe: GAAFET
A next-generation transistor structure in which the gate surrounds the channel on all sides; the successor to FinFET, used in the 2 nm class.
// EXPLANATION
The channel is built as stacked ribbons (nanosheets) and the gate wraps around all of them. Electrical control over the channel improves, leakage drops and voltage can be lowered. In FinFET the gate touched the channel from three sides.
// ALSO KNOWN AS
GAAFETgate-all-aroundGAA
// RELATED TERMS
FinFETA three-dimensional transistor structure in which the channel is raised as a fin and the gate wraps it on three sides.
TransistorThe semiconductor element that switches or amplifies current with a small voltage and is the basic building block of every digital chip.
Quantum tunnellingThe phenomenon in which electrons can probabilistically pass through a thin insulating barrier that classical physics says they could not cross.
Nanometre (process node)The name of a chip manufacturing technology (for example 3 nm, 2 nm); today it works more as a marketing label than a real length.
